vishay siliconix SUM110P08-11 new product document number: 73472 s-70309-rev. b, 12-feb-07 www.vishay.com 1 p-channel 80-v (d-s) mosfet features ? trenchfet ? power mosfet product summary v ds (v) r ds(on) ( ) i d (a) b q g (typ) - 80 0.0111 at v gs = - 10 v - 110 113 nc to-263 s gd top view drain connected to tab ordering information: SUM110P08-11 (lead (pb)-free) p-channel mosfet s g d notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 sec. d. maximum under steady state conditions is c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 80 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 110 a a t c = 125 c 71 t a = 25 c 23.5 b, c t a = 125 c 13.6 b, c pulsed drain current i dm - 120 continuous source-drain diode current t c = 25 c i s 110 a t a = 25 c - 9 b, c avalanche current l = 0.1 mh i as - 75 single-pulse avalanche energy e as 281 mj maximum power dissipation t c = 25 c p d 375 w t c = 125 c 125 t a = 25 c 13.6 b, c t a = 125 c 4.5 b, c operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t 10 sec r thja 811 c/w maximum junction-to-case (drain) steady state r thjc 0.33 0.4 rohs compliant
www.vishay.com 2 document number: 73472 s-70309-rev. b, 12-feb-07 vishay siliconix SUM110P08-11 new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 80 v v ds temperature coefficient v ds /t j i d = - 250 a - 85 mv/c v gs(th) temperature coefficient v gs(th) /t j 7.0 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 2 - 4 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 80 v, v gs = 0 v - 1 a v ds = - 80 v, v gs = 0 v, t j = 175 c - 500 on-state drain current a i d(on) v ds 10 v, v gs = - 10 v 120 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 20 a 0.092 0.0111 forward transconductance a g fs v ds = - 15 v, i d = - 20 a 80 s dynamic b input capacitance c iss v ds = - 40 v, v gs = 0 v, f = 1 mhz 11500 pf output capacitance c oss 790 reverse transfer capacitance c rss 700 total gate charge q g v ds = - 40 v, v gs = - 10 v, i d = - 110 a 185 280 nc gate-source charge q gs 40 gate-drain charge q gd 45 gate resistance r g f = 1 mhz 3.6 tu r n - o n d e l ay t i m e t d(on) v dd = - 40 v, r l = 0.36 i d ? - 110 a, v gen = - 10 v, r g = 1 25 40 ns rise time t r 410 620 turn-off delay time t d(off) 145 220 fall time t f 470 710 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 110 a pulse diode forward current a i sm - 120 body diode voltage v sd i s = - 20 a - 0.8 - 1.5 v body diode reverse recovery time t rr i f = - 20 a, di/dt = 100 a/s, t j = 25 c 65 100 ns body diode reverse recovery charge q rr 135 205 nc reverse recovery fall time t a 43 ns reverse recovery rise time t b 22
document number: 73472 s-70309-rev. b, 12-feb-07 www.vishay.com 3 vishay siliconix SUM110P08-11 new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 20 40 60 80 100 120 140 160 180 200 2 13 v gs = 10 v thru 6v v ds - (v) 4 v i d - (a) 0 20406080100 v gs = 10 v i d - (a) v gs = 6 v r ds - on ( ) 0.020 0.016 0.012 0.008 0.004 0.000 0.0 2.0 4.0 6.0 8.0 10.0 0.0 40.0 80.0 120.0 160.0 200.0 q g - (nc) v ds = 64 v v ds = 40 v v gs - (v) transfer characteristics capacitance on-resistance vs. junction temperature 0 10 20 30 40 012345 25 c t c = 125 c v gs - (v) i d - (a) - 55 c 0 3000 6000 9000 12000 15000 0 20406080 c oss c iss v ds - (v) c rss c ap - (pf) 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 v gs = 10 v t j - (c) r ds(on) - (normalized) i d = 20 a
www.vishay.com 4 document number: 73472 s-70309-rev. b, 12-feb-07 vishay siliconix SUM110P08-11 new product typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage power derating (junction-to-case) 0.0 0.3 0.6 0.9 1.2 1.5 t j = 150 c v sd - (v) 100 10 1 i s - (a) 25 c - 0.4 - 0.1 0.2 0.5 0.8 1.1 - 50 - 25 0 25 50 75 100 125 150 175 i d = 1 ma t j - (c) v gs(th) variance (v) t c power (w) 0 50 100 150 200 250 300 350 400 25 50 75 100 125 150 175 on-resistance vs. gate-to-source voltage single pulse power, junction-to-case (t c = 25 c) safe operating area 0.00 0.01 0.02 0.03 0.04 0.05 0246810 v gs - (v) 25 c 150 c r ds - ( ) time (sec) 0.0001 0.001 0.01 0.10 1 power (w) 0 1000 2000 3000 4000 5000 6000 v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified 0.1 1 10 100 0.1 100 1000 10 1 ms 100 ms, dc 100 s 10 s 10 ms i d (a) 1 single pulse t c = 25 c *limited by r ds(on)
document number: 73472 s-70309-rev. b, 12-feb-07 www.vishay.com 5 vishay siliconix SUM110P08-11 new product typical characteristics 25 c, unless otherwise noted *the power dissipation p d is based on t j(max) = 175 c, using junction-to-case thermal resistance , and is more useful in settling the upper dissi- pation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. vishay siliconix maintains worldwide manufac turing capability. products ma y be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?73472. max avalanche and drain current vs. case temperature 0 30 60 90 120 0 25 50 75 100 125 150 175 i d - (a) t c - (c) package limited avalanche current vs. time tin - (sec) i d av - (a) 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1.0 normalized thermal transient impedance, junction-to-case 0.1 0.2 0.01 0.1 1 normalized effective transient thermal impedance 0.01 1 0.0001 0.05 0.02 single 0.5 0.001 0.1
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
